格伦德曼所著《半导体物理学（第2版）》是一部分讲述半导体物理学的教材，为高年级本科生、研究生学习这门学科提供了大量丰富的材料，使得读者能够进入更深层次的学习和研究。一方面，这部教材是固态物理学和半导体物理之间的一个很好的平衡；另外一方面，是各种各样的半导体设备和它们在电子和光子设备中应用的很好展示。书中强调了半导体，如合金、异质结构、纳米结构等领域的实际应用方面，这些都是半导体物理学研究不可或缺，但又常常被忽略。

1 Introduction

 1.1 Timetable

 1.2 Nobel Prize Winners

 1.3 General Information

Part Ⅰ Fundamentals

2 Bonds

 2.1 Introduction

 2.2 Covalent Bonds

2.2.1 Electron-Pair Bond

2.2.2 sp3 Bonds

2.2.3 sp2 Bonds

 2.3 Ionic Bonds

 2.4 Mixed Bonds

 2.5 Metallic Bonding

 2.6 van-der-Waals Bonds

 2.7 Hamilton Operator of the Solid

3 Crystals

 3.1 Introduction

 3.2 Crystal Structure

 3.3 Lattice

3.3.1 Unit Cell

3.3.2 Point Group

3.3.3 Space Group

3.3.4 2D Bravais Lattices

3.3.5 3D Bravais Lattices

3.3.6 Polycrystalline Semiconductors

3.3.7 Amorphous Semiconductors:

 3.4 Important Crystal Structures

3.4.1 Rocksalt Structure

3.4.2 CsC1 Structure

3.4.3 Diamond Structure

3.4.4 Zincblende Structure

3.4.5 Wurtzite Structure

3.4.6 Chalcopyrite Structure

3.4.7 Fluorite Structure

3.4.8 Delafossite Structure

3.4.9 Perovskite Structure

3.4.1 0NiAs Structure

3.4.1 1Further Structures

 3.5 Polytypism

 3.6 Reciprocal Lattice

3.6.1 Reciprocal Lattice Vectors

3.6.2 Miller Indices

3.6.3 Brillouin Zone

 3.7 Alloys

3.7.1 Random Alloys

3.7.2 Phase Diagram

3.7.3 Virtual Crystal Approximation

3.7.4 Lattice Parameter

3.7.5 Ordering

4 Defects

 4.1 Introduction

 4.2 Point Defects

4.2.1 Point Defect Types

4.2.2 Thermodynamics

4.2.3 Diffusion

4.2.4 Dopant Distribution

4.2.5 Large Concentration Effects

 4.3 Dislocations

4.3.1 Dislocation Types

4.3.2 Visualization of Dislocations by Etching

4.3.3 Impurity Hardening

 4.4 Extended Defects

4.4.1 Micro-cracks

4.4.2 Stacking Faults

4.4.3 Grain Boundaries

4.4.4 Antiphase and Inversion Domains

 4.5 Disorder

5 Mechanical Properties

 5.1 Introduction ,

 5.2 Lattice Vibrations

5.2.1 Monoatomic Linear Chain

5.2.2 Diatomic Linear Chain

5.2.3 Lattice Vibrations of a Three-Dimensional Crystal

……

Part Ⅱ Selected Topics

Part Ⅲ Applications

Part Ⅳ Appendices